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CREE SIC MOSFET GATE DRIVER

This platform delivers vastly superior characteristics, thereby providing power designers with the potential to innovate smaller, faster, cooler, and more-efficient power solutions. This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Without question, it is beyond the reach of anything currently achievable with silicon. The GSMA Mobile World Congress is the world’s largest exhibition for the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a. Optimized for high-frequency power-electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. You must have JavaScript enabled in your browser to utilize the functionality of this website. New device performance eclipses incumbent silicon solutions, providing significant system-level performance and cost advantages in a range of high-frequency power-electronics applications.

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MWC Barcelona The GSMA Mobile World Congress is the world’s largest exhibition for the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a.

Register by October 18, Cree Social Tweets by cree Tweets by Cree.

About Cree Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting. Moreover, in addition to the industry-standard TO and TO packages, the new device is also offered in a low-impedance D2Pak-7L surface-mount package with a Kelvin connection to help minimize gate ringing.

Research Triangle Park, NC. Without question, it is beyond the reach of anything currently achievable mosft silicon. Please refer to www.

Cree Redefines the Discrete Power MOSFET Landscape with the Industry’s First V SiC MOSFET

New device performance eclipses incumbent silicon solutions, providing significant system-level performance and cost advantages in a range of high-frequency power-electronics applications. Optimized for high-frequency power-electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

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Existing V silicon MOSFETs have severe limitations for high-frequency switching circuits due to extremely high switching losses and poor internal body diodes. You must have JavaScript enabled in your browser to utilize the functionality of this website.

This platform delivers vastly superior characteristics, thereby providing power designers with the potential to innovate smaller, faster, cooler, and more-efficient power solutions. The GSMA Mobile World Congress is the world’s largest exhibition for the mobile industry, incorporating a thought-leadership conference that features prominent executives representing mobile operators, device manufacturers, technology providers, vendors a. JavaScript seems to be disabled yate your browser. This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated.